to-126 parameter l value unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5.0 v collector current i c 1.0 a i cp 1.5 a total dissipation at p tot 5.0 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c 2SC2314 description parameter symbol test conditions min. typ. max. unit collector cut-off current i cbo v cb =40v, i e =0 1.0 ua emitter cut-off current i ebo v eb =4.0v, i c =0 1.0 ua collector-emitter sustaining voltage v ceo i c =1.0ma, i b =0 45 v dc current gain h fe v ce =5v, i c =0.5a 60 320 collector-emitter saturation voltage v ce(sat) i c =0.5a,i b =50ma 0.6 v base-emitter saturation voltage v be(sat) i c =0.5a,i b =50ma 1.2 v current gain bandwidth product f t v ce =10v,i c =50ma 180 mhz qutput capacitance c ob v cb =10v,f=10mhz 25 pf npn epitaxial planar silicon transistors product specification 27 mhz cb transceiver driver applications electrical characteristics absolute maximum ratings( ta = 25 c) o ( ta = 25 c) o hfe classification: d=60~120 , e=100-200, f=160-320 east semiconductor co., ltd phone: 86-510-83880883 fax: 86-510-83883883 tiger electronic co.,ltd
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